30. C. Chen#, F. Chen# (co-first author), X. Chen, B. Deng, B. Eng, D. Jung, Q. Guo, S. Yuan, K. Watanabe, T. Taniguchi, M. L. Lee, F. Xia*, “Bright Mid-Infrared Photoluminescence from Thin-Film Black Phosphorus”, Nano Letters, 19, 1488, 2019.
29. C. Chen#, X. Chen# (co-first author), H. Yu, Y. Shao, Q. Guo, B. Deng, S. Lee, C. Ma, K. Watanabe, T. Taniguchi, J.G. Park, S. Huang, W. Yao, F. Xia*, “Symmetry-Controlled Electron-Phonon Interactions in van der Waals Heterostructures”, ACS Nano, 13, 552, 2019.
28. C. Chen#, X. Chen# (co-first author), Y. Shao, B. Deng, Q. Guo, F. Xia*, “Valley-selective Linear Dichroism in Layered Tin Sulfide”, ACS Photonics, 5, 3814, 2018.
27. B. Deng*, R. Frisenda*, C. Li, X. Chen, A. Castellanos‐Gomez, F. Xia, “Progress on Black Phosphorus Photonics”, Advanced Optical Materials, 1800365, 2018.
26. Z. Wu, X. Chen, M. Zhang, L. Wang, Y. Han, S. Xu, T. Han, J. Lin, L. An, J. Wang, X. Cai, R. Shi, C. Cheng, N. Wang*, “Fluctuation-induced tunneling conduction in iodine-doped bilayer graphene”, Journal of Applied Physics, 123, 244302, 2018.
25. X. Chen, C. Chen, A. Levi, L. Houben, B. Deng, S. Yuan, C. Ma, K. Watanabe, T. Taniguchi, D. Naveh, X. Du*, and F. Xia*, “Large-velocity saturation in thin-film black phosphorus transistors”, ACS Nano, 12, 5003, 2018.
24. S. Yuan, C. Shen, B. Deng, X. Chen, Q. Guo, Y. Ma, A. N. Abbas, B. Liu, R. Haiges, C. Ott, T. Nilges, K. Watanabe, T. Taniguchi, O. Sinai, D. Naveh, C. Zhou*, and F. Xia*, “Air-stable room-temperature mid-infrared photodetectors based on hBN/black arsenic phosphorus/hBN heterostructures”, Nano Letters, 18, 3172, 2018.
23. C. Li, Y. Wu, B. Deng, Y. Xie, Q. Guo, S. Yuan, X. Chen, M. Bhuiyan, Z. Wu, K. Watanabe, T. Taniguchi, H. Wang, J. J. Cha, M. Snure, Y. Fei*, and F. Xia*, “Synthesis of crystalline black phosphorus thin film on sapphire,” Advanced Materials, 30, 1703748, 2018.
22. X. Chen, X. Lu, B. Deng, O. Sinai, Y. Shao, C. Li, S. Yuan, V. Tran, K. Watanabe, T. Taniguchi, D. Naveh, L. Yang*, and F. Xia*, “Widely tunable black phosphorus mid-infrared photodetector”, Nature Communications, 8, 1672, 2017.
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20. X. Chen and F. Xia, “Black phosphorus optoelectronic devices”, Proceedings of SPIE, 10194, 2017.
19. Y. Shao, Y. Liu, X. Chen, C. Chen, I. Sarpkaya, Z. Chen, Y. Fang, J. Kong, K. Watanabe, T. Taniguchi, A.D. Taylor, J. Huang*and F. Xia*, “Stable graphene-two dimensional multiphase perovskite heterostructure phototransistors with high gain”, Nano Letters, 17, 7330, 2017.
18. X. Chen, L. Wang, Y. Wu, H. Gao, Y. Wu, G. Qin, Z. Wu, Y. Han, S. Xu, T. Han, W. Ye, J. Lin, G. Long, Y. He, Y. Cai, W. Ren, and N. Wang*, “Probing the electronics states and impurity effects in black phosphorus vertical heterostructures”, 2D Materials, 3, 015012, 2016.
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16. C. P. Berraquero, M. Barbone, D. M. Kara, X. Chen, I. Goykhman, D. Yoon, A.K. Ott, J. Beitner, K. Watanabe, T. Taniguchi, A.C. Ferrari*, and M. Atatüre*, “Atomically thin quantum light emitting diodes”, Nature Communications, 7, 12978, 2016.
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14. X. Chen, Y. Wu, Z. Wu, Y. Han, S. Xu, L. Wang, W. Ye, T. Han, Y. He, Y. Cai, and N. Wang*, “High quality sandwiched black phosphorus heterostructure and its quantum oscillations”, Nature Communications, 6, 7315, 2015.
13. X. Chen, Z. Wu, S. Xu, L. Wang, R. Huang, Y. Han, W. Ye, W. Xiong, T. Han, G. Long, Y. Wang, Y. He, Y. Cai, P. Sheng, and N. Wang*, “Probing the electron states and metal-insulator transition mechanisms in atomically thin MoS2 vertical heterostructures”, Nature Communications, 6, 6088, 2015.
12. S. Xu, Y. Han, X. Chen, Z. Wu, L. Wang, T. Han, W. Ye, H. Lu, G. Long, Y. Wu, J. Lin, Y. Cai, K.M. Ho, Y. He, and N. Wang*, “Van der Waals epitaxial growth of atomically thin Bi2Se3 and thickness-dependent topological phase transition”, Nano Letters, 15, 2645, 2015.
11. Y. Han, Z. Wu, S. Xu, X. Chen, L. Wang, Y. Wang, W. Xiong, T. Han, W. Ye, J. Lin, Y. Cai, K.M. Ho, Y. He, D. Su, and N. Wang*, “Probing defect-induced midgap states in MoS2 through graphene-MoS2 heterostructures”, Advanced Materials Interfaces, 2, 1500064, 2015.
10. Z. Wu, Y. Han, J. Lin, W. Zhu, M. He, S. Xu, X. Chen, H. Lu, W. Ye, T. Han, Y. Wu, G. Long, J. Shen, R. Huang, L. Wang, Y. He, Y. Cai, R. Lortz, D. Su, and N. Wang*, “Detection of interlayer interaction in few-layer graphene”, Physical Review B, 92, 075408, 2015.
9. Y. Wang, X. Chen, W. Ye, Z. Wu, Y. Han, T. Han, Y. He, Y. Cai and N. Wang*, “Side-gate modulation effects on high-quality BN-Graphene-BN nanoribbon capacitors”, Applied Physics Letters, 105, 243507, 2014.
8. L. Wang#, X. Chen# (co-first author), W, Zhu, Y. Wang, C. Zhu, Z. Wu, Y. Han, M. Zhang, W. Li, Y. He, and N. Wang*, “Detection of resonant impurities in graphene by quantum capacitance measurement”, Physical Review B, 89, 075410, 2014.
7. Z. Wu, Y. Han, R. Huang, X. Chen, Y. Guo, Y. He, W. Li, Y. Cai and N. Wang*, “Semimetallic-to-metallic transition and mobility enhancement enabled by reversible iodine doping of graphene”, Nanoscale, 10, 1093, 2014.
6. X. Chen, L. Wang, W. Li, Y. Wang, Z. Wu, M. Zhang, Y. Han, Y. He, and N. Wang*, “Electron-electron interactions in monolayer graphene quantum capacitors”, Nano Research, 6(7), 619-626, 2013.
5. Wei Li#, X. Chen# (co-first author), L. Wang, Y. He, Z. Wu, Y. Cai, M. Zhang, Y. Wang, Y. Han, R. Lortz, Z.Q. Zhang, P. Sheng, and N. Wang*, “Density of states and its local fluctuations determined by capacitance of strongly disordered graphene”, Scientific Reports, 3, 1772, 2013.
4. X. Chen, L. Wang, W. Li, Y. Wang, Y. He, Z. Wu, Y. Han, M. Zhang, W. Xiong, and N. Wang*, “Negative compressibility observed in graphene containing resonant impurities”, Applied Physics Letters, 102, 203103, 2013.
3. L. Wang#, X. Chen# (co-first author), Y. Wang, Z. Wu, W. Li, Y. Han, M. Zhang, Y. He, C. Zhu, K.K. Fung, and N. Wang*, “Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers”, Nanoscale 5, 1116, 2013.
2. L. Wang#, Y. Wang#, X. Chen# (co-first author), W. Zhu, C. Zhu, Z. Wu, Y. Han, M. Zhang, W. Li, Y. He, W. Xiong, K.T. Law, D. Su, and N. Wang*, “Negative quantum capacitance induced by midgap states in single-layer graphene”, Scientific Reports, 3, 2041, 2013.
